Prerequisites: EE 133 or consent of instructor
Description: Covers electronic devices including p-n junctions, field-effect transistors, hetero- junction bipolar transistors, and nanostructure devices. Explores electrical and optical properties of semiconductor heterostructures, superlattices, quan- tum wires, and dots, as well as devices based on these structures.
Cross-listing: Cross-listed with MSE 237C.