Prerequisites: EE 201/MSE 207, EE 203/MSE 237C, EE 208
Description: Covers the Boltzmann transport equation as applied to semicon- ductor device modeling. Topics include the physics of carrier scattering in common semiconductors, theoret- ical treatments of low and high field transport, bal- ance equations, and Monte Carlo solutions.
Credit: May be taken Satisfactory (S) or No Credit (NC) with consent of instructor and graduate advisor.