Units: 4
Hours: Lecture, 3 hours; laboratory, 3 hours
Catalog page 352
Prerequisites: EE 133; or equivalent
Description: Presents device simulations and hands-on experience in integrated-circuit fabrication techniques and device characterization. Uses four-mask metal-oxide semiconductor (MOS) technology to fabricate resistors, junctions, capacitors, and MOS transistors as well as to perform electrical evaluation.
Credit: Credit is awarded for one of the following EE 136 or EE 285A.