Prerequisites: graduate standing; or consent of instructor

Description: Presents device simulations and hands-on experience in integrated-circuit fabrication techniques and device characterization. Uses four-mask metal-oxide semiconductor (MOS) technology to fabricate resistors, junctions, capacitors, and MOS transistors as well as to perform electrical evaluation.

Credit: May be taken Satisfactory (S) or No Credit (NC) with consent of instructor and graduate advisor. Credit is awarded for one of the following EE 285A or EE 136.