Prerequisites: EE 203/MSE 237C
Description: Introduces advanced complementary metal oxide semiconductor (CMOS) technology. Topics include MOS field effect transistor (MOSFET) scaling; short and narrow channel effects; high field effects; vertical MOSFET transistors; single electron transistors; MOSFET nonvolatile memory devices; and small- and large-signal MOSFET models. Covers CMOS process integration.
Credit: May be taken Satisfactory (S) or No Credit (NC) with consent of instructor and graduate advisor.