EE 219: Advanced Complementary Metal Oxide Semiconductor (CMOS) Technology

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Units: 4

Hours: Lecture, 3 hours; discussion, 1 hour

Catalog page 252

Prerequisites: EE 203

Description: Introduces advanced complementary metal oxide semiconductor (CMOS) technology. Topics include MOS field effect transistor (MOSFET) scaling, short and narrow channel effects, high field effects, vertical MOSFET transistors, single electron transistors, MOS- FET nonvolatile memory devices, and small- and large-signal MOSFET models. Covers CMOS process integration.

Derived Information — The following is not part of the official catalog but is computed from catalog data.
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